View SPA-1118_1088604.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SPA-1118
Product Description
Sirenza Microdevices' SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
SPA-1118Z
Pb
RoHS Compliant & Green Package
850 MHz 1 Watt Power Amplifier with Active Bias
Product Features
* Now available in Lead Free, RoHS Compliant, & Green Packaging * High Linearity Performance: +21 dBm IS-95 Channel Power at -55 dBc ACP +48 dBm OIP3 Typ. * On-chip Active Bias Control * Patented High Reliability GaAs HBT Technology * Surface-Mountable Plastic Package
VCC VBIAS RFIN N/C
Input Match Active Bias
N/C N/C RFOUT/ VCC N/C
Applications * Multi-Carrier Applications * AMPS, ISM Applications
S ym b o l f0 P 1dB ACP S 21 VSWR OIP 3 NF IC C V CC R th,j-l
P a ra m e te rs: Tes t C o n d itio n s : Z 0 = 5 0 Oh m s , V C C = 5 V, Te m p = 2 5C F re que ncy o f Op e ra tion Output P o we r a t 1 dB C o m p re ssio n A d ja cent C ha nne l P o wer IS -9 5 @ 8 80 M Hz, 88 5 K Hz, P OUT = 2 1 dB m S m all S ig nal Ga in, 88 0 M Hz Inp ut V S W R Output Third Ord er Inte rce pt P o int P o we r o ut p er tone = +1 4 d B m No ise F igure D e vice C urre nt D e vice Vo lta g e Therm al Resistance (junctio n - lea d ) , TL =8 5C
U n its M Hz dB m dB c dB dB m dB mA V C /W
M in . 81 0
Typ .
M ax . 960
29 .5 -5 7.0 1 6.2 1 7.2 1 .5:1 4 8 .0 7.5 27 5 4 .75 3 10 5.0 35 330 5 .2 5 -5 4.0 1 8 .2
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-101427 Rev I
SPA-1118 850 MHz 1 Watt Power Amp.
850-950 MHz Application Circuit Data, ICC=320 mA, VCC=5V
IS-95 @ 880 MHz Adj. Channel Pwr. vs. Channel Output Pwr.
-45 -50 -55
Gain vs. Frequency
22 20 18
dB
dBc
-60 -65 -70 -75 17 18 19 20 dBm 21 22 23 24
16 14 25C 12 10 0 .8 5 85C -4 0 C 0 .8 7 0 .8 9
GHz
-40C 85C 25C
0 .9 1
0 .9 3
0 .9 5
P1dB vs. Frequency
32 30 28
dBm
Input/Output Return Loss, Isolation vs. Frequency, T=25C
0 -5 -1 0 -1 5 -2 0
dB
26 24 22 20 0 .85 2 5C 8 5C -40 C
S11 S12 S22
-2 5 -3 0 -3 5
0.8 7
0.8 9
GHz
0 .91
0 .93
0.9 5
-4 0 0 .8 5
0 .8 7
0 .8 9
GHz
0 .9 1
0 .9 3
0 .9 5
Device Current vs. Source Voltage
450 400 350 300 250 200 150 100 50 0 0 1 2
Vcc (V)
Device Current (mA)
25C -40C 85C
3
4
5
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-101427 Rev I
SPA-1118 850 MHz 1 Watt Power Amp.
850 - 950 MHz Schematic
VCC
10uF, Tantalum
1000pF
360
1 8 7 6
43pF 100 nH 22pF
Z=50, 17
4 5 2 3
22pF
5.6 pF
850 - 950 MHz Evaluation Board Layout
Vcc
C2
C3 C4 C1 R1 L1 C6
C5
Note: Pins 4, 5, 7, 8 are not connected internally
Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board Vpc
Ref. Des. C1, C6 C2 C3 C4 C5 L1 R1
Value 22pF, 5% 10uF, 10% 1000pF, 5% 43pF, 5% 5.6pF, 0.5pF 100nH, 5% 360 Ohm, 5%
Part Number Rohm MCH18 series AVX TAJB106K020R Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Coilcraft 1008HQ series Rohm MCR03 series
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-101427 Rev I
SPA-1118 850 MHz 1 Watt Power Amp.
Pin # 1
Function Vcc
Description VCC is the supply voltage for the active bias network. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. Vbias is the bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configuration is shown in the Application Schematic. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. No connection
3
Device Schematic
2
Vbias
1
4,5,7,8 N/C
ACTIVE BIAS NETWORK
2
6
3
RF In
4, 5 6
N/C
RF Out/Vcc RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. N/C Gnd No connection Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 5).
7, 8 EPAD
Absolute Maximum Ratings
Parameter (Ta = 25C) Max. Supply Current (ICC) at VCC typ. Max. Device Voltage (V CC) at ICC typ. Max. RF Input Power
The Moisture Sensitivity Level rating for this device is level 1 (MSL-1) based on the JEDEC 22-A113 standard classification. No special moisture packaging/handling is required during storage, shipment, or installation of the devices.
Absolute Limit 750 mA 6.0 V 24 dBm +160 C +150 C
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be
Max. Junction Temp. (TJ) Max. Storage Temp.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: ICCVCC (max) < (TJ - TL)/Rth,j-l
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com
EDS-101427 Rev I
SPA-1118 850 MHz 1 Watt Power Amp.
Package Outline Drawing (See SMDI MPO-101644 for tolerances, available on our website)
8 7 6 5 .194 [4.93] EXPOSED PAD
.236 [5.994] .155 [3.937]
1
2
3 .045 [1.143] .035 [.889]
4 Beveled Edge
TOP VIEW
BOTTOM VIEW
.050 [1.27]
.016 [.406] .061 [1.549] .008 [.203]
.058 [1.473]
.013 [.33] x 45
.008
.194 [4.928] .003 [.076] SIDE VIEW SEATING PLANE SEE DETAIL A
.155 [3.937]
END VIEW
PARTING LINE
Recommended Land Pattern
0.150 [3.81] Plated-Thru Holes (0.015" Dia, 0.030" Pitch)
.025
0.140 [3.56] 0.300 [7.62]
5 DETAIL A
Machine Screws 0.080 [2.03] 0.050 [1.27] 0.020 [0.51]
Note: DIMENSIONS ARE IN INCHES [MM] Part Identification Marking
Part Number Ordering Information
Lot ID SPA SPA-1118
Lot ID 1118
Lot ID SPA-1118Z
Part Number
Reel Size
Devices/Reel
SPA-1118 SPA-1118Z
7" 7"
500 500
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com
EDS-101427 Rev I

▲Up To Search▲

Price & Availability of SPA-1118

	To Download SPA-1118 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .